The TOSHIBA TLP351 consists of a GaAℓAs light emitting diode and a
integrated photodetector.
This unit is 8-lead DIP package.
TLP351 is suitable for gate driving circuit of IGBT or power MOS FET.
Especially TLP351 is capable of “direct” gate drive of lower Power IGBTs.
 

 Peak output current: ±0.6 A (max)

 Guaranteed performance over temperature: −40 to 100°C

 Supply current: 2 mA (max)

 Power supply voltage: 10 to 30 V

 Threshold input current : IF = 5 mA (max)

 Switching time (tpLH/tpHL) : 700 ns (max)

 Common mode transient immunity: 10 kV/µs

 Isolation voltage: 3750 Vrms